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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB1190
DESCRIPTION With TO-220 package High VCEO Large PC Complement to type 2SD1772 APPLICATIONS Power amplifier TV vertical deflection output
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -1 -2 1.4 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SB1190
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA , B=0
-150
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=-0.5mA ,IC=0 IC=-500mA; IB=-50mA
-6
V
Collector-emitter saturation voltage
-1.0
V
VBE
Base-emitter on voltage
IC=-300mA ; VCE=-10V
-1.0
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-50
|I
A
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-50
|I
A
hFE-1
DC current gain
IC=-100mA ; VCE=-10V
60
240
hFE-2 COB
DC current gain
IC=-300mA ; VCE=-10V IE=0 ; VCB=-10V,f=1MHz
50
Output capacitance
35
pF
fT
Transition frequency
IC=-100mA ; VCE=-10V
20
MHz
hFE-1 Classifications Q 60-140 P 100-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1190
Fig.2 Outline dimensions(unindicated tolerance:A
0.10 mm)
3


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